標題: Electron-electron interaction dominated quantum transport in thick CuGe films
作者: Hsu, SY
Shen, FJ
Lin, JJ
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: disordered metals;electron-electron interaction;hopping;quantum transport
公開日期: 1-Jul-2000
摘要: We have successfully made a series of thick CuxGe100-x films spanning the weakly and strongly localized regimes. With decreasing mole concentration of Cu relative to Ge, the resistivity of film becomes bigger at a given temperature and demonstrates a stronger temperature dependence at low temperatures. When x is big, 46 less than or equal to x less than or equal to 56, resistivity increases with the square root of the decreasing temperature, implying a weak-disorder behavior. For x small, 14 less than or equal to x less than or equal to 2.0, resistivity increases exponentially with decreasing temperature, implying a strongly localized behavior. The results show that the low-temperature transport in these films is dominated by the disorder enhanced electron-electron interaction effects. (C) 2000 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0921-4526(99)02606-X
http://hdl.handle.net/11536/30413
ISSN: 0921-4526
DOI: 10.1016/S0921-4526(99)02606-X
期刊: PHYSICA B
Volume: 284
Issue: 
起始頁: 1181
結束頁: 1182
Appears in Collections:Conferences Paper


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