標題: EVALUATION OF INSITU FORMED W-TI AND MOSI2 AS A DIFFUSION BARRIER TO AL FOR COSI2 SILICIDED CONTACT
作者: YANG, FM
CHEN, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1993
摘要: A simple metallization process to form a shallow CoSi2 silicided contact and W-Ti diffusion barrier simultaneously has been developed. The process starts with depositions of a Co-Ti alloy layer and an overlying W layer on silicon wafers using a dual e-beam evaporation system; this is followed by a single-step annealing treatment in a normal flowing-nitrogen furnace. On the other hand, bilayer self-aligned shallow MoSi2/CoSi2/Si silicided contact can be derived from the W/Co-Mo/Si system by a two-step annealing treatment performed in the same environment. I-V characteristics for silicided p+n diodes with the diffusion barriers formed in situ were measured after they had been finished with Al deposition and post-Al annealing at temperatures from 350 to 600-degrees-C in N2. For comparison, Al/CoSi2/p+n and Al/p+n structures were also investigated. It turns out that the integrity of Al/W-Ti/CoSi2/P+n and Al/MoSi2/COSi2/P+ n silicided contacts can be preserved up to 5 50 and 500-degrees-C, respectively, for a 20 min annealing, while that of Al/CoSi2/P+n can be kept only up to 450-degrees-C.
URI: http://dx.doi.org/10.1116/1.586781
http://hdl.handle.net/11536/3040
ISSN: 1071-1023
DOI: 10.1116/1.586781
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 11
Issue: 3
起始頁: 744
結束頁: 751
顯示於類別:期刊論文


文件中的檔案:

  1. A1993LH22800032.pdf