標題: Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080L
作者: Chu, J. T.
Cheng, Y. -J.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
光電工程學系
Department of Photonics
關鍵字: InGaN;GaN;MQW;vertical cavity;photoluminescence
公開日期: 2008
摘要: We report the observation of an abnormal photoluminescent (PL) spectrum from a HeCd laser pumped InGaN multiple quantum well (MQW) vertical cavity. The device is fabricated using standard MOCVD deposition on a (0001)-oriented sapphire substrate. The layer structures are: 10nm nucleation layer, a 4um bulk GaN layer, InGaN MQWs, and a final 200nm GaN cap layer. The InGaN MQWs consist of 10 pairs of 5 nm GaN barrier and 3 run In0.1Ga0.9N well. The peak emission of the as-grown MQWs sample was similar to 420nm. A dielectric distributed Bragg reflectors (DBR) were then coated on the top layer, followed by a laser lift off from sapphire substrate, and subsequently another DBR coated on the bulk GaN bottom surface. The cavity has a quality factor of similar to 520 from 400-490nm. The device was pumped by a focused CW HeCd laser from the bulk GaN side. When the laser is focused onto the InGaN MQWs, a photoluminescent spectrum centered at the designed MOW wavelength was observed as expected. However, when the focused position was moved toward the bulk GaN region, an additional abnormal PL peak around 460nm was observed. This is far outside the designed MQW wavelength.
URI: http://hdl.handle.net/11536/30386
http://dx.doi.org/10.1117/12.762869
ISBN: 978-0-8194-7083-6
ISSN: 0277-786X
DOI: 10.1117/12.762869
期刊: VERTICAL-CAVITY SURFACE-EMITTING LASERS XII
Volume: 6908
起始頁: L9080
結束頁: L9080
Appears in Collections:Conferences Paper


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