標題: Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer
作者: Chen, SS
Lin, CC
Peng, CK
Chan, YJ
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Aug-2000
摘要: Using the technique of molecular beam epitaxy, an indium passivation layer as thin as several tens of Angstrom was implemented to protect underlying III-V epilayers from carbon and oxygen contamination. After the subsequent desorption of the passivation layer, GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) were regrown. Negligible residual carriers were detected at the interface between the regrown PHEMTs and the underlying layer, resulting in a superior performance. The regrown PHEMTs with a 1 x 100 mum(2) gate demonstrated an extrinsic transconductance g(me) as high as 330 mS mm(-) (1). Microwave measurements showed that the current gain cut-off frequency f(t) was 26.5 GHz and the maximum oscillation frequency f(max) was up to 48 GHz. A small-signal equivalent circuit model of the regrown PHEMTs was also evaluated. (C) 2000 Kluwer Academic Publishers.
URI: http://dx.doi.org/10.1023/A:1008964417604
http://hdl.handle.net/11536/30379
ISSN: 0957-4522
DOI: 10.1023/A:1008964417604
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 11
Issue: 6
起始頁: 483
結束頁: 487
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