標題: Anomalous phosphorus cracker temperature-dependent photoluminescence spectra of InGaP grown by solid source molecular beam epitaxy
作者: Cheng, YC
Tai, KC
Chou, ST
光電工程學系
Department of Photonics
關鍵字: ordering;SSMBE;photoluminescence;InGaP;valved cracker
公開日期: 1-Aug-2000
摘要: InGaP grown by solid source molecular beam epitaxy showed lower effective band-gap energy with increasing phosphorus cracker temperature. Anomalous photoluminescence (PL) spectra also indicated that a weaker ordering effect was initiated when the cracker temperature was higher. Since the variation of cracker temperature mainly changed the P-2/P-4 ratio, we believe that the more chemically reactive P-2 incorporates more In into the epilayer. Therefore, InGaP grown under a more Pt-rich condition has a higher In content which results in the lower band-gap energy instead of having an ordering effect.
URI: http://dx.doi.org/10.1143/JJAP.39.L819
http://hdl.handle.net/11536/30374
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L819
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 8A
起始頁: L819
結束頁: L821
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