標題: Forward gated-diode measurement of filled traps in high-field stressed thin oxides
作者: Chen, MJ
Kang, TK
Huang, HT
Liu, CH
Chang, YJ
Fu, KY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: gated-diode;hot electron;MOSFET;neutral trap;oxide breakdown;SILC;thin oxide
公開日期: 1-Aug-2000
摘要: The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power lan relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.
URI: http://dx.doi.org/10.1109/16.853050
http://hdl.handle.net/11536/30369
ISSN: 0018-9383
DOI: 10.1109/16.853050
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 47
Issue: 8
起始頁: 1682
結束頁: 1683
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