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dc.contributor.authorLei, TFen_US
dc.contributor.authorChen, JHen_US
dc.contributor.authorWang, MFen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:45:00Z-
dc.date.available2014-12-08T15:45:00Z-
dc.date.issued2000-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.853029en_US
dc.identifier.urihttp://hdl.handle.net/11536/30368-
dc.description.abstractThis paper present a high-quality polysilicon oxide combining N2O nitridation and chemical mechanical polishing (CMP) processes. Experimental results indicate that polyoxide grown on the CMP sample exhibits a lower leakage current, higher dielectric breakdown field, higher electron barrier height, less electron trapping rate, higher charge-to-breakdown (Q(bd)), and lower density of trapping charge than those of non-CMP samples. In addition, the CMP process enhances nitrogen incorporation at the interface by the N2O nitridation, ultimately improving the polyoxide quality, Moreover, the CMP process smooths the surface of polysilicon and this planar surface reduces the out-diffusion of the phosphorous during thermal oxidation.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of polysilicon oxides combining N2O nitridation and CMP processesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.853029en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume47en_US
dc.citation.issue8en_US
dc.citation.spage1545en_US
dc.citation.epage1552en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088531400001-
dc.citation.woscount1-
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