標題: Characteristics of polysilicon oxides combining N2O nitridation and CMP processes
作者: Lei, TF
Chen, JH
Wang, MF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-2000
摘要: This paper present a high-quality polysilicon oxide combining N2O nitridation and chemical mechanical polishing (CMP) processes. Experimental results indicate that polyoxide grown on the CMP sample exhibits a lower leakage current, higher dielectric breakdown field, higher electron barrier height, less electron trapping rate, higher charge-to-breakdown (Q(bd)), and lower density of trapping charge than those of non-CMP samples. In addition, the CMP process enhances nitrogen incorporation at the interface by the N2O nitridation, ultimately improving the polyoxide quality, Moreover, the CMP process smooths the surface of polysilicon and this planar surface reduces the out-diffusion of the phosphorous during thermal oxidation.
URI: http://dx.doi.org/10.1109/16.853029
http://hdl.handle.net/11536/30368
ISSN: 0018-9383
DOI: 10.1109/16.853029
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 47
Issue: 8
起始頁: 1545
結束頁: 1552
顯示於類別:期刊論文


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  1. 000088531400001.pdf