標題: Detection of the defects induced by boron high-energy ion implantation of silicon
作者: Hsu, WC
Chen, MC
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-2000
摘要: A preferential chemical etching method was used to investigate the secondary defects induced in silicon by high-energy boron ion implantation followed by a rapid thermal anneal at 1000 degrees C for 30 s in N-2 ambient. The dislocation defects in silicon can be clearly delineated by the etchant of CrO3/HF mixing solution. Moreover, a band of striation corresponding To the region of dislocation defects can be observed from the cross-sectional view micrographs of scanning electron microscopy. For the high-energy boron ion implantation at a dose of 3 x 10(14) cm(-2) and energies of 0.5 to 2 MeV studied in this worst, the defect density is estimated to be in the order of 6 x 10(6) cm(-2). Furthermore, we found a close correlation between the depth profiles of the observed etching pits and that of the implanration-induced damage. (C) 2000 The Electrochemical Society. S0013-4651(00)01-011-9. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1393866
http://hdl.handle.net/11536/30359
ISSN: 0013-4651
DOI: 10.1149/1.1393866
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 8
起始頁: 3111
結束頁: 3116
顯示於類別:期刊論文


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