標題: Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
作者: Ezhilvalavan, S
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: BST;thin films;dielectrics;DRAM capacitors;leakage current density;dielectric constant;reliability
公開日期: 15-Aug-2000
摘要: This paper reviews the recent developments of (Ba,Sr)TiO3 (BST) thin films for future Gbit era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors in the last decade are briefly described first. Then the technological aspects of BST films such as deposition techniques, post-annealing, physical, electrical and dielectric characteristics of the films, effects of electrode materials, dielectric relaxation and defect analysis and the reliability phenomena associated with the films are briefly reviewed with specific examples from recent literature. The basic mechanisms that control the bulk electrical conduction and the origin of leakage currents in BST films are also discussed. Finally, possible developments of gigabit era DRAM technology are summarized. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(00)00253-4
http://hdl.handle.net/11536/30330
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(00)00253-4
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 65
Issue: 3
起始頁: 227
結束頁: 248
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