標題: Effect of size and plasma treatment and the application of Weibull distribution on the breakdown of PECVD SiNx MIM capacitors
作者: Ho, Chia-Cheng
Chiou, Bi-Shiou
電子工程學系及電子研究所
Innovative Packaging Research Center
Department of Electronics Engineering and Institute of Electronics
Innovative Packaging Research Center
關鍵字: Weibull distribution;weakest-link theory;plasma treatment;electric field
公開日期: 1-一月-2008
摘要: The dielectric breakdown field is one of the important concerns for device reliability. The breakdown of dielectric is originated at a fatal flaw that grows to cause failure and can be explained by the weakest-link theory. In this study, metal-insulator-metal (MIM) capacitors with plasma enhanced chemical vapor deposited (PECVD) SiNx are prepared. Ammonia (NH3) plasmas are applied after the deposition of the dielectric SiNx. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of the electrode area as well as the plasma treatment on the breakdown of the MIM capacitors. The time dependent dielectric breakdown testing indicates a decrease in both the leakage current and the lifetime of the MIM capacitors treated with plasma. Possible dielectric degradation mechanisms are explored. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2007.04.151
http://hdl.handle.net/11536/30320
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.04.151
期刊: MICROELECTRONIC ENGINEERING
Volume: 85
Issue: 1
起始頁: 110
結束頁: 114
顯示於類別:會議論文


文件中的檔案:

  1. 000253030100021.pdf