標題: An anomalous crossover in Vth roll-off for indium-doped nMOSFETs
作者: Chang, SJ
Chang, CY
Chen, CM
Chou, JW
Chao, TS
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: indium;SSR
公開日期: 1-Sep-2000
摘要: The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 mu m channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.
URI: http://hdl.handle.net/11536/30310
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 9
起始頁: 457
結束頁: 459
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