標題: Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures
作者: Wang, Jyh-Liang
Lai, Yi-Sheng
Chiou, Bi-Shiou
Chou, Chen-Chia
Lee, Trent Gwo-Yann
Tseng, Huai-Yuan
Jan, Chueh-Kuei
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2008
摘要: Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (T-s), ranging from 300-450 degrees C, has been investigated. As T-s increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance-electric field (C-E) hysteretic loops and a larger dielectric constant. The 350 degrees C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of similar to 620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 degrees C.
URI: http://dx.doi.org/10.1007/s00339-007-4224-1
http://hdl.handle.net/11536/30298
ISSN: 0947-8396
DOI: 10.1007/s00339-007-4224-1
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 90
Issue: 1
起始頁: 129
結束頁: 134
Appears in Collections:Conferences Paper


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