標題: Reduced reverse narrow channel effect in thin SOI nMOSFETs
作者: Chang, CY
Chang, SJ
Chao, TS
Wu, SD
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: reverse narrow channel effect (RNCE);silicon-on-insulator (SOI)
公開日期: 1-九月-2000
摘要: The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOGOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.
URI: http://hdl.handle.net/11536/30284
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 9
起始頁: 460
結束頁: 462
顯示於類別:期刊論文


文件中的檔案:

  1. 000089132500014.pdf