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dc.contributor.authorYang, Chung-Chlehen_US
dc.contributor.authorDai, Jing-Heen_US
dc.contributor.authorJiang, Ren Haoen_US
dc.contributor.authorZheng, Jing-Hulen_US
dc.contributor.authorLin, Chia-Fengen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:44:48Z-
dc.date.available2014-12-08T15:44:48Z-
dc.date.issued2008-02-01en_US
dc.identifier.issn0022-3697en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jpcs.2007.07.112en_US
dc.identifier.urihttp://hdl.handle.net/11536/30242-
dc.description.abstractSelf-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The Photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices. (c) 2007 Published by Elsevier Ltd.en_US
dc.language.isoen_USen_US
dc.titleFabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramidsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jpcs.2007.07.112en_US
dc.identifier.journalJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDSen_US
dc.citation.volume69en_US
dc.citation.issue2-3en_US
dc.citation.spage589en_US
dc.citation.epage592en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000253874700071-
Appears in Collections:Conferences Paper


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