標題: Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
作者: Yang, Chung-Chleh
Dai, Jing-He
Jiang, Ren Hao
Zheng, Jing-Hul
Lin, Chia-Feng
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 1-Feb-2008
摘要: Self-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The Photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices. (c) 2007 Published by Elsevier Ltd.
URI: http://dx.doi.org/10.1016/j.jpcs.2007.07.112
http://hdl.handle.net/11536/30242
ISSN: 0022-3697
DOI: 10.1016/j.jpcs.2007.07.112
期刊: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume: 69
Issue: 2-3
起始頁: 589
結束頁: 592
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000253874700071.pdf