標題: Temperature and annealing effects on photoluminescence spectra of (InAs)(1)/(GaP)(2) superlattices grown by solid-source molecular beam epitaxy
作者: Cheng, YC
Chi, S
Chou, ST
Huang, KF
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: multi-axial strain;SSMBE;photoluminescence;RTA;InAs/GaP
公開日期: 1-Oct-2000
摘要: Anomalous variation of photoluminescence (PL) wavelengths with temperature was observed in (InAs)(1)/(GaP)(2) short-period-superlattice (SPS) quantum wells grown by solid-source molecular beam epitaxy with different phosphorus and arsenic cracker temperatures. We believed that the anomalous PL behavior could be attributed to the multi-axial strain effect existed at the abrupt InAs and GaP interfaces in the SPS structure. After rapid thermal anneal (RTA) treatment, the anomalous PL spectra in the low temperature region disappeared but the high temperature PL characteristics remained, which revealed the thermal stability of the (InAs)(1)/(GaP)(2) quantum well structures and its potential in replacing InGaAsP quaternary.
URI: http://dx.doi.org/10.1143/JJAP.39.L968
http://hdl.handle.net/11536/30238
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L968
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 10A
起始頁: L968
結束頁: L971
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