標題: Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing
作者: Huang, JC
Luo, JS
Lin, WT
Chang, CY
Shih, PS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2000
摘要: The thickness effect of an interposed Mo layer between Ti and Si0.76Ge0.24 films on the lowering of the formation temperature of C54 (Ti, Mo)(Si1-xGex)(2), thereby reducing Ge segregation and agglomeration of the C54 (Ti, Mo)(Si1-xGex)(2) films, is studied. Upon rapid thermal annealing, the interposed Mo layer can significantly reduce the formation temperature of C54 (Ti, Mo)(Si1-xGex)(2); however, the amount of reduction decreases with the Mo thickness. The electron/atom ratio seems to be one of the important factors in the lowering of the formation temperature of C54 (Ti, Mo)(Si1-xGex)(2). For the samples having an interposed Mo layer 0.5 nm thick a smooth C54 (Ti, Mo)(Si1-xGex)(2) film without Ge segregation can be grown after annealing at a temperature of 625-650 degreesC. For pulsed KrF laser annealing the rapid melt/solidification process allows only growth of C40 Ti(Si1-xGex)(2) or C40 (Ti, Mo)(Si1-xGex)(2) even though an interposed Mo layer is introduced into the Ti/Si0.76Ge0.24 samples, indicating that upon pulsed laser annealing the kinetic effect can dominate over the thermodynamic effect.
URI: http://dx.doi.org/10.1088/0268-1242/15/10/301
http://hdl.handle.net/11536/30225
ISSN: 0268-1242
DOI: 10.1088/0268-1242/15/10/301
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 15
Issue: 10
起始頁: 941
結束頁: 945
顯示於類別:期刊論文


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