標題: Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen
作者: Chiu, HT
Wang, CN
Chuang, SH
應用化學系
Department of Applied Chemistry
公開日期: 1-十月-2000
摘要: Tantalum oxide is a high dielectric material suitable for DRAM applications. CVD results using tert-butyl-imidotris(diethylamido)tantalum precursor are encouraging. AFM (see Figure), XRD, XPS, and Auger indicate that, on annealing, the deposited films crystallize to beta-Ta2O5 with uniform Ta and O distribution. Metal oxide semiconductor (MOS) capacitors fabricated from these films are also evaluated.
URI: http://hdl.handle.net/11536/30213
ISSN: 0948-1907
期刊: CHEMICAL VAPOR DEPOSITION
Volume: 6
Issue: 5
起始頁: 223
結束頁: +
顯示於類別:期刊論文


文件中的檔案:

  1. 000089889400005.pdf