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dc.contributor.authorWang, T. C.en_US
dc.contributor.authorWang, Y. L.en_US
dc.contributor.authorHsieh, T. E.en_US
dc.contributor.authorChang, S. C.en_US
dc.contributor.authorCheng, Y. L.en_US
dc.date.accessioned2014-12-08T15:44:45Z-
dc.date.available2014-12-08T15:44:45Z-
dc.date.issued2008-02-01en_US
dc.identifier.issn0022-3697en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jpcs.2007.07.119en_US
dc.identifier.urihttp://hdl.handle.net/11536/30209-
dc.description.abstractThe mechanism of copper (Cu) voids formation from electro-chemical plating (ECP) followed by Cu chemical mechanical polishing (CMP) are studied in Cu dual-damascene interconnection. The formation of Cu voids at metal lines is the main problem that causes not only the failure of via-induced metal-island corrosion but also yield loss. The galvanic theory and Cu lifting mechanism are proposed to explain the dependence of Cu-void performance on the Cu grain size and the benzotriazole (BTA, C6H5N3) flow rates. In the integration process of Cu interconnects, it is found that the smaller Cu grain size in ECP conditions and less BTA flow rate in CMP processes cannot only reduce the number of Cu voids but also improve the water yield. (c) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsemiconductorsen_US
dc.subjectthin filmsen_US
dc.subjectdefectsen_US
dc.subjectelectrical propertiesen_US
dc.titleCopper voids improvement for the copper dual damascene interconnection processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jpcs.2007.07.119en_US
dc.identifier.journalJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDSen_US
dc.citation.volume69en_US
dc.citation.issue2-3en_US
dc.citation.spage566en_US
dc.citation.epage571en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000253874700066-
Appears in Collections:Conferences Paper


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