標題: A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset application
作者: Chang, EY
Lee, DH
Chen, SH
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: PHS;low voltage handset application;GaAs;power PHEMT
公開日期: 15-Oct-2000
摘要: A 1.2 V GaAs power pseudomorphic high electron mobility transistors (PHEMT's) for personal handy phone system (PHS) handset application was developed. The power PHEMT has a dual delta doped AlGaAs/InGaAs/GaAs based structure with compact device layout. The 6.72 mm device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2V drain bias with an output power of 22.18 dBm. Under 1.9 GHz pi /4-shifted quadrature phase shift keying (QPSK) modulated PHS signal, the device shows an adjacent channel leakage power (P-adj) Of -56.86 dBc at 600 kHz apart from the center frequency and a linear efficiency of 41.31%. This is the first report on the 1.2-V operation power PHEMT for PHS handset application so far.
URI: http://dx.doi.org/10.1143/JJAP.39.L1019
http://hdl.handle.net/11536/30201
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L1019
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 10B
起始頁: L1019
結束頁: L1022
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