Title: Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide
Authors: Wu, Jun
Wang, Ying-Lang
Kua, Cheng-Tzu
Department of Materials Science and Engineering
Keywords: electronic materials;semiconductor;thin film;vapor deposition;defect
Issue Date: 1-Feb-2008
Abstract: Precipitates were observed on the surface of fluorine-doped silicon oxide (SiOF) films. These precipitates are flake-type and hexagonal in shape, showing up rapidly after initiation, and clustered at the wafer center. Post-deposition N(2)O plasma treatment (post-plasma treatment) was found to be most effective in inhibiting the appearance of precipitates. In this paper, effects of post-deposition N(2)O plasma treatment on the suppression of precipitates and stabilities of SiOF film were studied. X-ray photoelectron spectroscopy (XPS) analyses were conducted to investigate the changes in surface composition of SiOF films after N(2)O plasma treatment. The surface morphology of the film was characterized by atomic force microscopy (AFM). Cross-sectional transmission electron microscopy (TEM) images showed that a surface layer of 150 A was generated after N(2)O plasma treatment. The changes on surface structures of SiOF films caused by N(2)O plasma treatment and the consequent inhibition of precipitate formation were discussed. (c) 2007 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jpcs.2007.11.020
ISSN: 0022-3697
DOI: 10.1016/j.jpcs.2007.11.020
Volume: 69
Issue: 2-3
Begin Page: 555
End Page: 560
Appears in Collections:Conferences Paper

Files in This Item:

  1. 000253874700064.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.