標題: Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition
作者: Huang, HY
Lin, WC
Lee, WH
Shu, CK
Liao, KC
Chen, WK
Lee, MC
Chen, WH
Lee, YY
電子物理學系
Department of Electrophysics
公開日期: 30-Oct-2000
摘要: We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor-acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I-2) transition in undoped GaN increases with temperature as T-1.5. However, the I-2 recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. (C) 2000 American Institute of Physics. [S0003-6951(00)01941-0].
URI: http://hdl.handle.net/11536/30195
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 77
Issue: 18
起始頁: 2819
結束頁: 2821
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