標題: Thermal uniformity of 12-in silicon wafer during rapid thermal processing by inverse heat transfer method
作者: Lin, S
Chu, HS
機械工程學系
Department of Mechanical Engineering
關鍵字: 12-in silicon wafer;inverse heat-transfer method;rapid thermal processing;thermal uniformity
公開日期: 1-Nov-2000
摘要: Through an inverse heat transfer method, this paper presents a finite difference formulation for determination of incident heat fluxes to achieve thermal uniformity in a 12-in silicon wafer during rapid thermal processing. A one-dimensional thermal model and temperature-dependent thermal properties of a silicon wafer are adopted in this study. Our results show that the thermal nonuniformity ran be reduced considerably if the incident heat fluxes on the wafer are dynamically controlled according to the inverse-method results, An effect of successive temperature measurement errors on thermal uniformity is discussed. The resulting maximum temperature differences are only 0.618, 0.776, 0.981, and 0.326 degreesC for 4-, 6-, 8- and 12-in wafers, respectively, The required edge heating compensation ratio for thermal uniformity in 4-, 6-, 8- and 12-in silicon wafers is also evaluated.
URI: http://dx.doi.org/10.1109/66.892631
http://hdl.handle.net/11536/30171
ISSN: 0894-6507
DOI: 10.1109/66.892631
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 13
Issue: 4
起始頁: 448
結束頁: 456
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