標題: Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric
作者: Liu, PT
Chang, TC
Huang, MC
Yang, YL
Mor, YS
Tsai, MS
Chung, H
Hou, J
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2000
摘要: This work has investigated the electrical and material characteristics of post-chemical mechanical planarization (CMP) methylsilsesquioxane (MSQ). Experimental results have shown that the dielectric properties of low k MSQ deteriorate after the CMP process. However, by applying H-2-plasma post-treatment, the degraded characteristics can be restored to a similar state as that of a pre-CMP MSQ film. Material and electrical analyses were performed to elucidate the detailed mechanisms of H-2-plasma treatment on post-CMP MSQ. H-2-plasma treatment provides active hydro en radicals to passivate the dangling bonds exposed in the MSQ after the CMP process. The hydrogen-rich passivation layer is hydrophobic and effectively prevents further moisture uptake. Therefore, a degradation-free CMP process can be achieved employing H-2-plasma treatment. (C) 2000 The Electrochemical Society. S0013-4651(00)04-098-2. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1394061
http://hdl.handle.net/11536/30170
ISSN: 0013-4651
DOI: 10.1149/1.1394061
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 11
起始頁: 4313
結束頁: 4317
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