標題: The effect of copper on gate oxide integrity
作者: Lin, YH
Wu, YH
Chin, A
Pan, FM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2000
摘要: We have studied the effect of copper contamination after the front-end metal-oxide-semiconductor capacitor fabrication on gate oxide integrity. The significant effect of Cu contamination on the pretunneling current, in combination with insensitive dependence of the Fowler-Nordheim tunneling current, oxide charge density, and breakdown field on the Cu concentration, suggests that the current leakage mechanism may be due to neutral traps generated by Cu inside oxide. In addition to pretunneling oxide leakage, a small amount of Cu contamination increases the interface trap density that may degrade the device performance. (C) 2000 The Electrochemical Society. S0013-4651(00)03-073-1. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1394059
http://hdl.handle.net/11536/30169
ISSN: 0013-4651
DOI: 10.1149/1.1394059
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 11
起始頁: 4305
結束頁: 4306
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