標題: Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing
作者: Chen, JH
Lei, TF
Chen, JH
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2000
摘要: The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work. The surface morphology of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N-2/N2O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (+V-g and -V-g) (C) 2000 The Electrochemical Society. S0013-4651(00)01-051-X. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1394054
http://hdl.handle.net/11536/30168
ISSN: 0013-4651
DOI: 10.1149/1.1394054
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 11
起始頁: 4282
結束頁: 4288
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