標題: A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
作者: Yang, KN
Huang, HT
Chang, MC
Chu, CM
Chen, YS
Chen, MJ
Lin, YM
Yu, MC
Jang, SM
Yu, DCH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2000
摘要: A model of the hole direct tunneling gate current accounting for heavy and light hole's subbands in the quantized inversion layer is built explicitly. This model comprises four key physical parameters: inversion layer charge density, hole impact frequency on SiO2/Si interface, WKB transmission probability, and reflection correction factor. With the effective hole mass m(oxh) = 0.5m(o) for parabolic dispersion relationship in the oxide, experimental reproduction without any parameter adjustment is consistently achieved in p(+) poly-gate pMOSFETs with 1.23, 1.85, and 2.16 nm gate oxide thicknesses. The proposed model can thereby serve as a promising characterization means of direct tunnel oxides. In particular, it is calculated that the secondary subbands and beyond, although occupying few holes, indeed contribute substantially to the direct tunneling conduction due to effective lo,vcr barrier heights, and are prevailing over the first subbands for reducing oxide field down below 1 MV/cm.
URI: http://dx.doi.org/10.1109/16.877179
http://hdl.handle.net/11536/30139
ISSN: 0018-9383
DOI: 10.1109/16.877179
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 47
Issue: 11
起始頁: 2161
結束頁: 2166
Appears in Collections:Articles


Files in This Item:

  1. 000090135700020.pdf