標題: Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
作者: Chu, CF
Yu, CC
Wang, YK
Tsai, JY
Lai, FI
Wang, SC
光電工程學系
Department of Photonics
公開日期: 20-十一月-2000
摘要: In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1x10(17) cm(-3). The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 degreesC. Linear I-V ohmic characteristics were observed with specific resistance as low as 1.0x10(-4) Omega cm(2) for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1x10(19) cm(-3). Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5x10(-6) Omega cm(2). (C) 2000 American Institute of Physics. [S0003-6951(00)01847-7].
URI: http://hdl.handle.net/11536/30129
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 77
Issue: 21
起始頁: 3423
結束頁: 3425
顯示於類別:期刊論文


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