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dc.contributor.authorChen, CYen_US
dc.contributor.authorChang, Len_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorChang, DFen_US
dc.date.accessioned2014-12-08T15:44:38Z-
dc.date.available2014-12-08T15:44:38Z-
dc.date.issued2000-11-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/30128-
dc.description.abstractCopper metallization for GaAs was evaluated by using Cu/Ta/GaAs multilayers for its thermal stability. A thin Ta layer of 40 nm was sputtered on the GaAs substrate as the diffusion barrier before copper film metallization. As judged from sheet resistance, x-ray diffraction, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films with GaAs were very stable up to 500 degreesC without migration into GaAs. After 550 degreesC annealing, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaAs2. At 600 degreesC annealing, the reaction GaAs with Ta and Cu formed TaAs, TaAs2, and Cu3Ga, resulting from Cu migration and interfacial instability. (C) 2000 American Institute of Physics. [S0003-6951(00)03047-3].en_US
dc.language.isoen_USen_US
dc.titleThermal stability of Cu/Ta/GaAs multilayersen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume77en_US
dc.citation.issue21en_US
dc.citation.spage3367en_US
dc.citation.epage3369en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000165395900017-
dc.citation.woscount35-
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