標題: AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography
作者: Lin, CM
Loong, WA
應用化學系
Department of Applied Chemistry
關鍵字: high transmittance;attenuated phase-shifting mask;chemical composition;optical property;scattering bar;Taguchi method
公開日期: 1-十二月-2000
摘要: AlSixOy (Al : Si : O = 1 : 0.36 : 0.88) thin film has the potential for use as a new and high-transmittance (T% similar to 35%) embedded layer of an attenuated phase-shifting mask (AttPSM) in 193 nm lithography. Increasing the compositions of Al2O3, SiO2 and other oxides increases n and decreases k in AlSixOy. Compared to a conventional AttPSM (T% < 10%), the high-T% AttPSM assisted by opaque Cr scattering bars can achieve a greater depth of focus, 0.45 <mu>m for a 0.10 mum isolated line. Under the conditions of BCl3/Cl-2 = 30/7 seem, chamber pressure 3 mTorr; source power 1400 W and RF bias power 30 W, the etching selectivity of AlSixOy over positive resist EP-1EG is 7.7 : 1. Under those of BCl3/Cl-2/O-2 = 35/7/3.2 seem, the selectivity of AlSixOy over substrate fused silica is 5.8 : 1. A 0.25-mum-line/space (1 : 1) etched pattern was successfully fabricated using AlSixOy as an embedded layer.
URI: http://dx.doi.org/10.1143/JJAP.39.6801
http://hdl.handle.net/11536/30114
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.6801
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 12B
起始頁: 6801
結束頁: 6806
顯示於類別:會議論文