標題: RTE lag in diffractive optical element etching
作者: Ting, JH
Su, JC
Su, SY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RIE lag;diffractive optical elements;anisotropic etching
公開日期: 1-十二月-2000
摘要: In this study, the pattern of a 4 mm diameter diffractive optical element with linewidth ranging from 12 to 0.5 mum was adopted. With the SiO2 layer as the etch hard mask, silicon was etched based on HBr chemistry with additions of O-2 and SF6 . The effects of O-2 content on the sidewall anisotropy, etch rate, and etch selectivity over the SiO2 mask were also examined. The RIE lag, where etching of a small trench (hole) lags behind a large trench (hole), was investigated to produce an optimum aspect ratio for each zone of the diffractive optical element. The regression relation of the etch depth versus zone width was determined as a guideline for the feasibility of this method. (C) 2000 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0167-9317(99)00450-5
http://hdl.handle.net/11536/30105
ISSN: 0167-9317
DOI: 10.1016/S0167-9317(99)00450-5
期刊: MICROELECTRONIC ENGINEERING
Volume: 54
Issue: 3-4
起始頁: 315
結束頁: 322
顯示於類別:期刊論文


文件中的檔案:

  1. 000166094400011.pdf