標題: THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION
作者: YEH, CF
CHENG, JY
LU, JH
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
關鍵字: ANODIC OXIDATION;ALUMINUM;ALPHA-SI TFT;HILLOCK;AL2O3;DOUBLE-LAYER
公開日期: 1-六月-1993
摘要: Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al2O3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al2O3 is developed by anodic oxidation method. The electrical characteristics of Al2O3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al2O3 has been developed. In addition, the double-layer of Al2O3/SiN is also shown to be sufficiently protective against hillock formation.
URI: http://dx.doi.org/10.1143/JJAP.32.2803
http://hdl.handle.net/11536/3010
ISSN: 0021-4922
DOI: 10.1143/JJAP.32.2803
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 32
Issue: 6A
起始頁: 2803
結束頁: 2808
顯示於類別:期刊論文


文件中的檔案:

  1. A1993LL78500044.pdf