標題: Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
作者: Wang, HCH
Diaz, CH
Liew, BK
Sun, JYC
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot carriers;MOS devices;transient enhanced diffusion
公開日期: 1-十二月-2000
摘要: This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors, Arsenic/phosphorus LDI) nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated, Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n(-) LDD doping profile by taking advantage of phosphorus TED.
URI: http://dx.doi.org/10.1109/55.887478
http://hdl.handle.net/11536/30092
ISSN: 0741-3106
DOI: 10.1109/55.887478
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 12
起始頁: 598
結束頁: 600
顯示於類別:期刊論文


文件中的檔案:

  1. 000165684000018.pdf