標題: TRANSIENT AND STEADY-STATE CARRIER TRANSPORT UNDER HIGH-FIELD STRESSES IN SONOS EEPROM DEVICE
作者: LIN, JK
CHANG, CY
HUANG, HS
HO, TS
CHEN, KL
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: CARRIER TRANSPORT;SONOS;WKB;TRAPPING PARAMETER;DETRAPPING FACTOR;HIGH FIELD STRESS
公開日期: 1-六月-1993
摘要: The carrier transport model of tunneling oxide in a polysilicon-oxide-nitride-oxide-silicon (SONOS) device has been developed. The model is deduced from WKB approximation, and uses Fermi-Dirac statistics. Using the J-E and accompanied by Arnett's trapping model, the switching behavior of the SONOS device can be predicted in a very wide range of switching times from 1 mus to 0.1 s. The steady-state charge distribution and electric field in Si3N4 are also calculated. From Arnett's fundamental equations of Si3N4, we deduce the steady-state equations which describe the electric field and trapping charges. The trapping parameters and detrapping factor v are discussed and the results are obtained via computer for different temperatures and stress voltages, which are based on the current measurement of SONOS devices. We find that the detrapping effect is somewhat less dominant compared to the trapping effect in our simulations.
URI: http://dx.doi.org/10.1143/JJAP.32.2748
http://hdl.handle.net/11536/3009
ISSN: 0021-4922
DOI: 10.1143/JJAP.32.2748
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 32
Issue: 6A
起始頁: 2748
結束頁: 2752
顯示於類別:期刊論文


文件中的檔案:

  1. A1993LL78500035.pdf