|標題:||Properties of Mg activation in thermally treated GaN : Mg films|
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
|摘要:||The Mg accepters of GaN films are activated as p-type GaN with rapid thermal annealing (RTA) and furnace treatments. The GaN:Mg films are activated successfully by using the RTA system below 1000 degreesC for 1 min. After the RTA treatment, we observed a sharper linewidth and stronger emission intensities from donor to acceptor peaks in the photoluminescence spectra. By comparing the electrical properties of GaN:Mg films at optimum conditions made with RTA (800 degreesC) and furnace (700 degreesC) treatments, we find similar activated hole concentration and a higher hole mobility for GaN:Mg films with RTA treatment at 800 degreesC. A higher bulk resistivity caused by increasing nitrogen vacancies is found at higher temperature and longer time RTA treatments. Faster treatment times and lower temperatures for the GaN:Mg films were achieved with the RTA activation process. (C) 2000 American Institute of Physics. [S0021-8979(00)04120-7].|
|期刊:||JOURNAL OF APPLIED PHYSICS|
|Appears in Collections:||Articles|
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