標題: Plasma effects of fluorine implantation on As+-doped polycrystalline silicon thin films of various thicknesses
作者: Liou, BW
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: amorphorization;polysilicon;neutralization;passivation
公開日期: 8-十二月-2000
摘要: This work studied plasma effects on the resistivity, effective free carrier concentration, and mobility of As (+)-doped, F-implanted polycrystalline silicon (polysilicon) thin films of various thicknesses. It was found that the resistivity of the polysilicon thin film increases with the decrease of the thickness of the film. This is mainly due to the decrease of the effective carrier concentration and mobility through the decrease of the grain size which is limited by the thickness of the him. Hydrogen and NH3 plasma treatments decrease the effective carrier concentration of the film through neutralization of As ions. This effect is more evident for the thinner films (< 60 nm). The mobility of the high F-dose sample (3 x 10(15) cm(-2)) is larger than that of the low F-dose samples (1 x 10(15) cm(-2)), because the implanted F atoms passivate trapping states of the polysilicon thin film. Through the use of the F implantation passivation and the NH3-plasma treatment, a polysilicon film of a high mobility can be obtained. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(00)01188-3
http://hdl.handle.net/11536/30052
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(00)01188-3
期刊: THIN SOLID FILMS
Volume: 379
Issue: 1-2
起始頁: 213
結束頁: 217
顯示於類別:期刊論文


文件中的檔案:

  1. 000166264900033.pdf