標題: Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates
作者: Hwang, CC
Lai, MJ
Jaing, CC
Chen, JS
Huang, S
Juang, MH
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: BST films;RF cosputtering;oxygen vacancies;O-2 plasma;low temperature
公開日期: 15-十二月-2000
摘要: In this study, we employed an oxygen plasma post-treatment to improve the leakage characteristics of Pt/(Ba, Sr)TiO3(BST)/Pt capacitors prepared by the RF cosputtering technique. Applying oxygen plasma treatment to BST thin films can effectively passivate the oxygen vacancies of the BST films, thus decreasing the electric conduction paths of leakage current. The leakage current is reduced by as many as two orders of magnitude by this low-temperature (250 degreesC) and short duration (similar to5 min) process. However, the usage of oxygen plasma treatment is not unrestricted. Plasma treatment over a long time (more than 10 min) degrades the leakage characteristics, due to plasma damage. Therefore, a proper oxygen plasma treatment for as-deposited BST films is desired to improve leakage characteristics of BST thin films.
URI: http://dx.doi.org/10.1143/JJAP.39.L1314
http://hdl.handle.net/11536/30050
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L1314
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 12B
起始頁: L1314
結束頁: L1316
顯示於類別:期刊論文


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