標題: High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
作者: Tsai, Chun-Chien
Lee, Yao-Jen
Wang, Jyh-Liang
Wei, Kai-Fang
Lee, I-Che
Chen, Chih-Chung
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: excimer laser crystallization;double-gate;thin film transistor (TFT)
公開日期: 1-Mar-2008
摘要: In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs (W/L = 1.5/1.5 mu m) had the field-effect-mobility exceeding 400 cm(2)/V s, on/off current ratio higher than 10(8), superior short-channel characteristics and higher current drivability. (c) 2007 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2007.10.029
http://hdl.handle.net/11536/30042
ISSN: 0038-1101
DOI: 10.1016/j.sse.2007.10.029
期刊: SOLID-STATE ELECTRONICS
Volume: 52
Issue: 3
起始頁: 365
結束頁: 371
Appears in Collections:Conferences Paper


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