標題: InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
作者: Tyan, SL
Lin, YG
Tsai, FY
Lee, CP
Shields, PA
Nicholas, RJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: quantum wells;nanostructures;optical properties;luminescence
公開日期: 2001
摘要: We report a magneto optical characterization of InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures grown on (111)B GaAs substrates. The photoluminescence (PL) peak shift under high excitation intensity is used to distinguish QW from QD structures together with atomic force microscopy (AFM) imaging, The binding energy in(lll)InGaAs/GaAs QW is about 5 meV, The extent of the wave function obtained from the diamagnetic shift of the PL peak energy is consistent with the result calculated by the k,p method. The InGaAs/GaAs QD lateral confinement energy and the dot size are also estimated from the diamagnetic shift of the PL lines. The lateral confinement energy is estimated as 7 meV. The mean radius of the InGaAs QD is about 14 nm and the dot height is about 6 nm, which is in good agreement with the results as revealed in AFM imaging. (C) 2001 Published by Elsevier Science Ltd.
URI: http://hdl.handle.net/11536/29988
http://dx.doi.org/10.1016/S0038-1098(01)00018-7
ISSN: 0038-1098
DOI: 10.1016/S0038-1098(01)00018-7
期刊: SOLID STATE COMMUNICATIONS
Volume: 117
Issue: 11
起始頁: 649
結束頁: 654
顯示於類別:期刊論文


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  1. 000167475900005.pdf