標題: The effect of polyimide passivation on the electromigration of Cu multilayer interconnections
作者: Jiang, JS
Chiou, BS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2001
摘要: Electromigration damage (EMD) is one of the major causes for the failures of interconnect. In this study, the electromigration (EM) of Cu multilayer (TiWN/Cu/TiWN) with polyimide passivation is investigated with an isothermal resistance change method. The EM measurements were carried out on a wafer level at various temperatures (170-230 degreesC) and current densities (2.28-4.0 MA/cm(2)). The activation energy for passivated Cu multilayer is larger than that of the unpassivated ones. The lifetime of passivated specimens are from two to 16 times those of the unpassivated ones. Resistance oscillation, which is attributed to the formation and closing of Cu gap, is observed during EM test. The TiWN interlayer helps to maintain the electrical continuity when a local Cu gap is formed. Hence, the lifetime of Cu metallization is further enhanced by the presence of the interlayer. Copper multilayer interconnect has better EMD resistance than Cu monolayer interconnect does. (C) 2001 Kluwer Academic Publishers.
URI: http://hdl.handle.net/11536/29983
http://dx.doi.org/10.1023/A:1012802117916
ISSN: 0957-4522
DOI: 10.1023/A:1012802117916
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 12
Issue: 11
起始頁: 655
結束頁: 659
顯示於類別:期刊論文


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