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dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorLo, Ming-Huaen_US
dc.contributor.authorHuang, Hung-Wenen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing Chungen_US
dc.date.accessioned2014-12-08T15:44:20Z-
dc.date.available2014-12-08T15:44:20Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.2954en_US
dc.identifier.urihttp://hdl.handle.net/11536/29942-
dc.description.abstractGaN-based light-emitting diodes (LEDs) with naturally formed nano pyramids roughened surfaces grown by metal organic chemical vapor deposition (MOCVD) were demonstrated. In this study, Mg-treatment, a growth-.interruption step and a surface treatment using biscyclopentadienyl magnesium (CP(2)Mg), was performed to form the nano pyramids on the surface of a p-type cladding layer, and then a p-type contact layer was grown on the p-type cladding layer, so as to create a p-type contact layer with a rough surface. Assisted by the nano pyramids surface roughening process, the light output power of the LEDs reached 11.3 and 9.7 mW with 10 and 5 min Mg-treatment at a driving current of 20 mA. The light outputs were increased by 48 and 27%, respectively, compared with the results from the LED without Mg-treatment.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectMg-treatmenten_US
dc.subjectnano pyramidsen_US
dc.titleMetal organic chemical vapor deposition growth of GaN-based light emitting diodes with naturally formed nano pyramidsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.47.2954en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue4en_US
dc.citation.spage2954en_US
dc.citation.epage2956en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000255449100136-
Appears in Collections:Conferences Paper


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