標題: A reverse-voltage protection circuit for MOSFET power switches
作者: Hong, HP
Wu, JC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;latch-up;power switch
公開日期: 1-一月-2001
摘要: When MOSFET is used as a power switch, if is essential to prevent reverse current flow through the parasitic body diodes under reverse voltage condition. A new built-in reverse voltage protection circuit for MOSFETs has been developed. In this design, an area-efficient circuit is used to automatically select the proper well bias voltage to prevent reverse current under the reverse-voltage condition. This built-in reverse protection circuit has been successfully implemented in a high-side power switch application using a 0.6-mum CMOS process. The die area of the protection circuit is only 2.63 % of that of a MOSFET. The latch-up immunity is greater than +12 V and -10 V in voltage triggering mode, and greater than +/-500 mA in current triggering mode, The protection circuit is not in series with the MOSFET switch, so that the full output swing and high power efficiency are achieved.
URI: http://dx.doi.org/10.1109/4.896242
http://hdl.handle.net/11536/29938
ISSN: 0018-9200
DOI: 10.1109/4.896242
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 36
Issue: 1
起始頁: 152
結束頁: 155
顯示於類別:期刊論文


文件中的檔案:

  1. 000166569700020.pdf