標題: Analysis of temperature effects on high-frequency characteristics of RF lateral-diffused metal-oxide-semiconductor transistors
作者: Hu, Hsin-Hui
Chen, Kun-Ming
Huang, Guo-Wei
Chien, Alex
Cheng, Eric
Yang, Yu-Chi
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: cutoff frequency;layout structure;LDMOS;maximum oscillation frequency;S-parameters;temperature
公開日期: 1-四月-2008
摘要: In this work, the effects of temperature on the DC and RF characteristics of lateral-diffused metal-oxide-semi conductor (LDMOS) transistors were studied. Devices with different layout structures were fabricated using a 40 V LDMOS process. The temperature coefficients of the threshold voltage and channel mobility are negative and their values are similar for devices with fishbone and ring structures. In addition, we found that both the cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) decrease with increasing temperature. The variations of f(T) with different temperatures are not only affected by the change in transconductance but also affected by the drain resistance. Finally, the temperature behaviors of S-parameters were measured, and the ring structure showed less S(22) variation with different temperatures than the fishbone structure. We extracted the model parameters of the devices to explain this observation.
URI: http://dx.doi.org/10.1143/JJAP.47.2650
http://hdl.handle.net/11536/29931
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.2650
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 4
起始頁: 2650
結束頁: 2655
顯示於類別:會議論文


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  1. 000255449100068.pdf