標題: Gallium K-edge x-ray absorption study on Mg-doped GaN
作者: Pan, YC
Wang, SF
Lee, WH
Lee, MC
Chen, WK
Chen, WH
Jang, LY
Lee, JF
Chiang, CI
Chang, H
Wu, KT
Lin, DS
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 1-Jan-2001
摘要: Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the formation of a mixing-phase structure of cubic and hexagonal phases. Analysis of the extended x-ray absorption region of the spectra revealed doping-related defects such as vacancies, substitutions, and interstitial occupations. They were formed anisotropically in the crystal c axis direction and its perpendiculars. Disorderliness arising from phase mix and defects is believed to have lowered the Debye temperature of the doped GaN films and caused the destructive interference of the absorption fine-structure oscillation functions. These effects were taken into account for the observed large coordination number reductions in our samples. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1337636
http://hdl.handle.net/11536/29907
ISSN: 0003-6951
DOI: 10.1063/1.1337636
期刊: APPLIED PHYSICS LETTERS
Volume: 78
Issue: 1
起始頁: 31
結束頁: 33
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