標題: Phosphorus-species-induced band-gap anomaly in InGaP grown by solid-source molecular-beam epitaxy
作者: Cheng, YC
Chi, S
Huang, KF
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: SSMBE;photoluminescence;photoreflectance;InGaP;ordering
公開日期: 1-Feb-2001
摘要: We report on the growth of InGaP by solid-source molecular-beam epitaxy. It is revealed by photoluminescence (PL) that a lower effective band-gap energy appeared when a higher phosphorus cracker temperature was used. Temperature-dependent PL and polarized photoreflectance (PR) also exhibited a weaker atomic ordering effect when the phosphorus cracker temperature increased. Since the variation of the phosphorus cracker temperature significantly changed the P-2/P-4 ratio, we believe that a more chemically reactive P-2 will not only incorporate more In atoms into the epilayer, but will also bring about a smaller composition fluctuation and weaker ordering effect. Therefore, InGaP grown under a more P-2-rich condition probably has a higher In content which results in a lower band-gap energy instead of the ordering effect.
URI: http://dx.doi.org/10.1143/JJAP.40.736
http://hdl.handle.net/11536/29891
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.736
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 2A
起始頁: 736
結束頁: 739
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