標題: Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
作者: Wang, HCH
Wang, CC
Chang, CS
Wang, TH
Griffin, PB
Diaz, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOS devices;transient enhanced diffusion;ultrashallow junction;up-hill diffusion
公開日期: 1-二月-2001
摘要: This paper investigates anomalous diffusion behavior for ultra low energy implants in the extension or tip of PMOS devices. Transient enhanced diffusion (TED) is minimal at these low energies, since excess interstitials are very close to the surface, Instead, interface induced uphill diffusion is found, for the first time, to dominate during low temperature thermal cycles. The interface pile-up dynamics can be taken advantage of to produce shallower junctions and improve short channel effect control in PMOS devices, Attempts to minimize TED before spacer deposition by inclusion of extra RTA. anneals are shown to be detrimental to forming boron ultra shallow junctions.
URI: http://dx.doi.org/10.1109/55.902833
http://hdl.handle.net/11536/29882
ISSN: 0741-3106
DOI: 10.1109/55.902833
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 22
Issue: 2
起始頁: 65
結束頁: 67
顯示於類別:期刊論文


文件中的檔案:

  1. 000167074000006.pdf