標題: Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes
作者: Chen, JF
Chen, NC
Wang, JS
Chen, YF
電子物理學系
Department of Electrophysics
關鍵字: capacitance spectroscopy;deep traps;InGaAs/GaAs;Schottky diodes
公開日期: 1-Feb-2001
摘要: The use of a differential capacitance technique for characterizing the relaxation-induced defect states in Schottky diodes has been studied, Based on a proposed equivalent circuit including the effect of potential drop across the carrier-depletion layer, a simple equation of capacitance at different voltages and frequencies is derived and compared with experimental data obtained from relaxed In0.2Ga0.8As/GaAs samples, It is shown that the carrier-depletion layer will introduce capacitance dispersion over frequency like traps; from it the device's geometric parameters, the resistance of the carrier-depletion lager and the ionization energy of the deep level that gives rise to this resistance can be obtained. The relation between the low-frequency capacitance and reverse voltage can be well explained by the depletion of the free carriers between the Schottky depletion and the carrier-depletion layer The relaxation-induced traps are believed to be at 0.535 and 0.36 eV, respectively, in the GaAs and In0.2Ga0.8As regions.
URI: http://dx.doi.org/10.1109/16.902717
http://hdl.handle.net/11536/29863
ISSN: 0018-9383
DOI: 10.1109/16.902717
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 2
起始頁: 204
結束頁: 209
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