標題: Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
作者: Lu, TC
Fu, R
Shieh, HM
Huang, KJ
Wang, SC
光電工程學系
Department of Photonics
公開日期: 12-二月-2001
摘要: A two-wavelength integrated laser diode (TWINLD) with aluminum-free active areas (AAA) has been realized by monolithically combining two different laser material structures in a single chip utilizing the metalorganic chemical vapor deposition growth and regrowth techniques. The single TWINLD chip comprises two ridge wave-guide lasers, one is an InGaP/InGaAlP material structure for a 650 nm red laser, and another is an InGaAsP/AlGaAs material structure with AAA for a 780 nm infrared laser. The chip geometry is 300 mum long and 300 mum wide with a separation of 150 mum between two laser emission spots. The ridge widths are 3.5 and 2 mum for the red and IR laser, respectively, and both lasers emit a single transverse mode with a threshold current of 12 mA for a 650 nm laser and 14 mA for a 780 nm laser under continuous wave operation condition. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1347019
http://hdl.handle.net/11536/29851
ISSN: 0003-6951
DOI: 10.1063/1.1347019
期刊: APPLIED PHYSICS LETTERS
Volume: 78
Issue: 7
起始頁: 853
結束頁: 855
顯示於類別:期刊論文


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