標題: The effect of the growth temperature on polyoxide by rapid thermal processing
作者: Chang, KM
Lee, TC
Sun, YL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: oxynitridation;polyoxide;polysilicon;gate voltage shift;charge-to-breakdown
公開日期: 1-三月-2001
摘要: A rapid thermal oxynitridation process using N2O gas as the oxidant has been developed. Due to a smoother polyoxide/polysilicon interface, polyoxide grown by rapid thermal processing has better reliability than that of polyoxide grown by a conventional furnace. Moreover, in order to explore the effects of growth temperature on polyoxides, polyoxides were grown at different temperatures in this study. From this work, we find that polyoxide grown at low temperatures has better reliability than polyoxides grown at high temperature and exhibits improved characteristics such as higher breakdown electric field, less gate voltage shift, and larger charger-to-breakdown.
URI: http://dx.doi.org/10.1143/JJAP.40.1157
http://hdl.handle.net/11536/29823
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.1157
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 3A
起始頁: 1157
結束頁: 1161
顯示於類別:期刊論文


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  1. 000170771500001.pdf